Webdensity, through-wafer via (TWV) that is compatible with standard semiconductor processing. The via is 30 Fm in size, and the resistance is less than 50 me/via through a … WebMentioning: 14 - Ultra-Low Resistance, Through-Wafer Via (TWV) Technology and Its Applications in Three Dimensional Structures on Silicon - Soh, Hyongsok Tom, Yue ...
PROGRESS AND APPLICATION OF THROUGH GLASS VIA (TGV) …
WebAn IC chip and design structure having a TWV contact contacting the TWV and extending through a second dielectric layer over the TWV. An IC chip may include a substrate; a through wafer via (TWV) extending through at least one first dielectric layer and into the substrate; a TWV contact contacting the TWV and extending through a second dielectric … WebMar 8, 2024 · The method 200 includes semiconductor wafer processing with formation of transistors at 202 on or in a starting semiconductor wafer (e.g., a silicon wafer, a silicon-on-insulator (SOI) wafer, etc.), and metallization processing at 204 in order to form a single or multilevel metallization structure with conductive terminals 109 exposed along a top side … fhchi
US20240090365A1 - Fan-out package with antenna - Google Patents
WebThis paper presents an ultra-low resistance, high wiring density, through-wafer via (TWV) technology that is compatible with standard silicon wafer processing. Vias as small as 30 µm by 30 µm are fabricated through a 525 µm thick wafer. This results in an aspect ratio for the via that is greater than 17:1. Furthermore, the dc resistance of a single via is less than … WebThis paper provides a starting point exploiting the TWV technology when compared to planar for an alternative inductor design, a 3D inductor using through- devices. This technology shows promising results with further wafer vias (TWVs), also known as through-silicon vias development and optimization. (TSVs). WebMethods of forming through wafer vias (TWVs) and standard contacts in two separate processes to prevent copper first metal layer puddling and shorts are presented. In one embodiment, a method may include forming a TWV into a substrate and a first dielectric layer over the substrate; forming a second dielectric layer over the substrate and the TWV; … department of education division office